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WebDec 21, 2010 · In the LSA100A system, a single narrow CO2 laser beam is used to heat the wafer surface from a substrate temperature of approximately 400 degrees Celsius to the peak annealing temperature in the ... WebMay 11, 2010 · A new dual-beam laser spike annealing (DB-LSA) technology is developed to expand the application space of non-melt laser annealing. In the standard … flash card set
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WebJul 14, 2011 · Dual Beam LSA for Long Dwell Applications Key highlights Preheat A second laser beam is addedA second laser beam is added to the system to expand process capabilities CO 2 Laser Wafer Laser Allows access to the time regime ~ 10 msec 1200 Used for front end processes, 1400 T p e.g., Defect anneal 600 Solidphaseregrowth 800 … WebMillisecond Laser Spike Annealing Shaoyin Chen 1, XiaoruWang 1, Michael Thompson 2, YunWang 1, ... NCCAVS Junction Technology Group Meeting Annealing Technology and Time Scale 200 400 600 800 1000 1200 ... Pre-heat laser only process Dual-beam process Low T (Silicide Formation) Stress Reduction (Junction WebA new dual-beam laser spike annealing (DB-LSA) technology is developed to expand the application space of non-melt laser annealing. In the standard LSA configuration, a … flashcards euro fh